MJE3055T
MJE3055T is Silicon NPN Power Transistors manufactured by SavantIC.
DESCRIPTION
- With TO-220 package
- plement to type MJE2955T
- DC current gain -h FE = 20- 70 @ IC = 4 Adc
- Collector- emitter saturation voltage
- VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
APPLICATIONS
- Designed for general- purpose switching and amplifier applications.
PINNING
DESCRIPTION
1 Base
2 Collector
3 Emitter
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO VCEO VEBO
IC IB PC Tj Tstg
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature
Open emitter Open base Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE 70 60 5 10 6 75 150
-55~150
UNIT V V V A A W
VALUE 1.67
UNIT /W
Savant IC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise...
Representative MJE3055T image (package may vary by manufacturer)