MJF13007 Overview
Description
With TO-220F package - High voltage ,high speed APPLICATIONS - Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJF13007 Fig.1 simplified outline (TO-220F) and symbol SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Emitter current Emitter current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 700 400 9 8 16 4 8 12 24 40 150 -65~150 UNIT V V V A A A A A A W SYMBOL Rth j-C PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector outoput capacitance CONDITIONS IC=10mA; IB=0 IC=2A; IB=0.4A IC=5A ;IB=1.0A TC=100 IC=8A ;IB=2.0A IC=2A ;IB=0.4A IC=5A ;IB=1.0A TC=100 VCB=700V; IE=0 TC=125 VEB=9V; IC=0 IC=2A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz IE=0; f=0.1MHz ; VCB=10V 8 5 4 MIN 400 MJF13007 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 1.0 2.0 3.0 3.0 1.2 1.6 1.5 0.1 1.0 0.1 40 30 V V V V V mA mA MHz 80 pF.
