MJF13007 Datasheet and Specifications PDF

The MJF13007 is a NPN Transistor.

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Part NumberMJF13007 Datasheet
ManufacturerInchange Semiconductor
Overview ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 2.0(Max) @ IC= 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable . AMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W MJF13007 isc Website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise spec.
Part NumberMJF13007 Datasheet
DescriptionPOWER TRANSISTOR
Manufactureronsemi
Overview ON Semiconductort SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall . 8.0 16 4.0 8.0 12 24 80 0.64
* 65 to 150 Unit Vdc Vdc Vdc Adc Adc Adc Watts W/°C °C MJE13007 POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80 WATTS THERMAL CHARACTERISTICS Thermal Resistance
* Junction to Case
* Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 S.
Part NumberMJF13007 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220F package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,s. mal resistance from junction to case VALUE 3.12 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation volt.
Part NumberMJF13007 Datasheet
DescriptionPOWER TRANSISTOR
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13007/D Designer's Data Sheet SWITCHMODE™ MJE13007 MJF13007 POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS NPN Bipolar Power T. nuous Base Current
* Peak (1) Emitter Current
* Continuous Emitter Current
* Peak (1) RMS Isolation Voltage (for 1 sec, R.H. < 30%, TA = 25°C) Test No. 1 Per Fig. 15 Test No. 2 Per Fig. 16 Test No. 3 Per Fig. 17 Proper strike and creepage distance must be provided Total Device Dissipation @ TC = 25°.