Part MJF15031
Description SILICON POWER TRANSISTOR
Category Transistor
Manufacturer SavantIC
Size 257.65 KB
SavantIC

MJF15031 Overview

Description

With TO-220F package - Complement to type MJF15030 - High transition frequency - DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC =- 3.0 Adc hFE = 20 (Min) @ IC = -4.0 Adc APPLICATIONS - Designed for use as high–frequency drivers in audio amplifiers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJF15031 Fig.1 simplified outline (TO-220F) and symbol SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -8 -16 -2 2 36 150 -65~150 UNIT V V V A A A W SYMBOL Rth j-C Rth j-A PARAMETER SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-1A ;IB=-0.1A IC=-1A ; VCE=-2V VCB=-150V; IE=0 VCE=-150V; IB=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-2A ; VCE=-2V IC=-3A ; VCE=-2V IC=-4A ; VCE=-2V IC=-0.5A;VCE=-10V;f=10MHz 40 40 40 20 30 MIN -150 MJF15031 SYMBOL VCEO(SUS) VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT TYP.