Datasheet Details
| Part number | MJF15030 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.79 KB |
| Description | NPN Transistor |
| Download | MJF15030 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MJF15030 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.79 KB |
| Description | NPN Transistor |
| Download | MJF15030 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V(Min) · High DC current gain - : hFE = 40 (Min) @IC= 3.0 A : hFE = 20 (Min) @IC= 4.0 A ·Complement to Type MJF15031 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 150 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 8 ICM Collector Current-Peak 16 IB Base Current 2 Collector Power Dissipation PC @Ta=25℃ Collector Power Dissipation @TC=25℃ 2 36 Tj Junction Temperature 150 Tstg Storage Temperature -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W MJF15030 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors MJF15030 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.1A VBE(on) Base-Emitter On Voltage IC= 1A ;
VCE= 2V ICBO Collector Cutoff Current VCB= 150V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJF15030 | COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola |
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MJF15030 | COMPLEMENTARY SILICON POWER TRANSISTORS | ON |
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MJF15030 | SILICON POWER TRANSISTOR | SavantIC |
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MJF15030-BS01 | Silicon Power Transistor | MCC |
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