MJF15030 Datasheet and Specifications PDF

The MJF15030 is a NPN Transistor.

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Part NumberMJF15030 Datasheet
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V(Min) · High DC current gain - : hFE = 40 (Min) @IC= 3.0 A : hFE = 20 (Min) @IC= 4.0 A ·Complement to Type MJF15031 ·Minimum Lot-to-Lot variatio. te: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors MJF15030 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation.
Part NumberMJF15030 Datasheet
DescriptionCOMPLEMENTARY SILICON POWER TRANSISTORS
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJF15030/D Complementary Power Transistors • • • • • • MJF15030 PNP MJF15031 COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLT. ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ.
Part NumberMJF15030 Datasheet
DescriptionCOMPLEMENTARY SILICON POWER TRANSISTORS
Manufactureronsemi
Overview MJF15030 (NPN), MJF15031 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general−purpose amplifier and switching applications, where the mounting surface of the .
* Electrically Similar to the Popular MJE15030 and MJE15031
* No Isolating Washers Required, Reduced System Cost
* High Current Gain
*Bandwidth Product
* UL Recognized, File #E69369, to 3500 VRMS Isolation
* These Devices are Pb
*Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Uni.
Part NumberMJF15030 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220F package ·Complement to type MJF15031 ·High transition frequency ·DC current gain specified to 4.0 amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc . ase Thermal resistance , junction to ambient MAX 3.5 62.5 UNIT /W /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on volt.