TIP35A Overview
Description
With TO-3PN package - Complement to type TIP36/36A/36B/36C - DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS - Designed for use in general purpose power amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP35/35A/35B/35C Fig.1 simplified outline (TO-3PN) and symbol SYMBOL PARAMETER TIP35 VCBO Collector-base voltage TIP35A TIP35B TIP35C TIP35 VCEO Collector-emitter voltage TIP35A TIP35B TIP35C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 100 40 60 80 100 5 25 40 5 125 150 -65~150 V A A A W V V UNIT SYMBOL Rth j-c PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP35 Collector-emitter sustaining voltage TIP35A IC=30mA ;IB=0 TIP35B TIP35C VCE(sat)-1 VCE(sat)-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Collector cut-off current TIP35/35A TIP35B/35C TIP35 Collector cut-off current TIP35A TIP35B TIP35C IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency IC=15A ;IB=1.5A IC=25A; IB=5A IC=15A ; VCE=4V IC=25A ; VCE=4V VCE=30V; IB=0 CONDITIONS TIP35/35A/35B/35C SYMBOL MIN 40 60 TYP.
