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TIP35A - Complementary Silicon High-Power Transistors

Key Features

  • 25 A Collector Current.
  • Low Leakage Current.
  • ICEO = 1.0 mA @ 30 and 60 V.
  • Excellent DC Gain.
  • hFE = 40 Typ @ 15 A.
  • High Current Gain Bandwidth Product.
  • ⎪hfe⎪ = 3.0 min @ IC = 1.0 A, f = 1.0 MHz.
  • These are Pb.
  • Free Devices.

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Datasheet Details

Part number TIP35A
Manufacturer onsemi
File Size 258.06 KB
Description Complementary Silicon High-Power Transistors
Datasheet download datasheet TIP35A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Complementary Silicon High-Power Transistors TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − ⎪hfe⎪ = 3.0 min @ IC = 1.0 A, f = 1.0 MHz • These are Pb−Free Devices* MAXIMUM RATINGS Symbol Rating TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C Unit VCEO Collector − Emitter Voltage 60 VCB Collector − Base Voltage 60 VEB Emitter − Base Voltage IC Collector Current − Continuous − Peak (Note 1) 80 100 Vdc 80 100 Vdc 5.0 Vdc Adc 25 40 IB Base Current − Continuous 5.