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SSG4575 - Enhancement Mode Power MOSFET

General Description

The SSG4575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Simple Drive Requirement.
  • Lower On-resistance D1 8 D1 7 D2 6 D2 5 Dimensions in millimeters D1 D2.
  • Fast Switching Performance Date Code 4575SS G1 S1 G2 1 S1 2 G1 3 S2 4 G2 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage www. DataSheet4U. com Gate-Source Voltage Symbol VDS VGS Ratings N-Channel 60 ±20 P-Channel -60 ±20 -4.2 -3.3 -30 2 Unit V V A A A W W/ C o o Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 ID@TA=25 C ID@TA=70.

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Datasheet Details

Part number SSG4575
Manufacturer SeCoS Halbleitertechnologie GmbH
File Size 654.01 KB
Description Enhancement Mode Power MOSFET
Datasheet download datasheet SSG4575 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSG4575 Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product N Channel 6A, 60V,R DS(ON) 36m£[ P Channel -4.2A, - 60V,R DS(ON) 72m£[ SOP-8 Description 0.40 0.90 0.19 0.25 The SSG4575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27Typ. 45 6.20 5.80 0.25 o 0.375 REF 3.80 4.00 4.80 5.00 0.10~0.25 0 o 8 o 1.35 1.