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SSG4565 - Enhancement Mode Power MOSFET

General Description

The SSG4565 provide the designer with the best combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.

Key Features

  • Simple Drive Requirement.
  • Lower On-resistance D1 8 D1 7 D2 6 D2 5 D1 0 o 8 o 1.35 1.75 Dimensions in millimeters.
  • Fast Switching Performance Date Code D2 4565SS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www. DataSheet4U. com Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current 1 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings N-Channel P-Channel 40 ±20 7.6 6 30.

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Datasheet Details

Part number SSG4565
Manufacturer SeCoS Halbleitertechnologie GmbH
File Size 508.63 KB
Description Enhancement Mode Power MOSFET
Datasheet download datasheet SSG4565 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSG4565 Elektronische Bauelemente N Channel 7.6A, 40V,RDS(ON) 25m£[ P Channel 6.5A, 40V,RDS(ON) 33m £[ Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.40 0.90 0.19 0.25 The SSG4565 provide the designer with the best combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27Typ. 45 6.20 5.80 0.25 o 0.375 REF 3.80 4.00 4.80 5.00 0.10~0.25 Features * Simple Drive Requirement * Lower On-resistance D1 8 D1 7 D2 6 D2 5 D1 0 o 8 o 1.35 1.