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SSG4565 Datasheet Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: SSG4565 Elektronische Bauelemente N Channel 7.6A, 40V,RDS(ON) 25m£[ P Channel 6.5A, 40V,RDS(ON) 33m £[ Enhancement Mode Power Mos.

General Description

0.40 0.90 0.19 0.25 The SSG4565 provide the designer with the best bination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.

The SOP-8 package is universally preferred for all mercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.

0.35 0.49 1.27Typ.

Key Features

  • Simple Drive Requirement.
  • Lower On-resistance D1 8 D1 7 D2 6 D2 5 D1 0 o 8 o 1.35 1.75 Dimensions in millimeters.
  • Fast Switching Performance Date Code D2 4565SS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www. DataSheet4U. com Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current 1 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings N-Channel P-Channel 40 ±20 7.6 6 30.

More Datasheets from SeCoS Halbleitertechnologie GmbH

Part Number Description
SSG4575 Enhancement Mode Power MOSFET

SSG4565 Distributor