SDG5521C - N and P-Ch Enhancement Mode Power MOSFET

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2.
3 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E.

SeCoS Halbleitertechnologie

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Datasheet Details

Part number	SDG5521C
Manufacturer	SeCoS Halbleitertechnologie
File Size	93.46 KB
Description	N and P-Ch Enhancement Mode Power MOSFET
Datasheet	SDG5521C Datasheet
Additional preview pages of the SDG5521C datasheet.

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Full PDF Text Transcription

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SDG5521C Elektronische Bauelemente N-Ch: 5A, 20V, RDS(ON) 58 mΩ P-Ch: -4.7A, -20V, RDS(ON) 77 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. DFN2*3 FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2*3 saves board space. Fast switching speed. High performance trench technology. REF.

Published: Aug 11, 2014 |