SDG5521C Datasheet N and P-Ch Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

SDG5521C n and p-ch enhancement mode power mosfet by SeCoS Halbleitertechnologie GmbH - Datasheet Preview

Datasheet Details

Part number	SDG5521C
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	93.46 KB
Description	N and P-Ch Enhancement Mode Power MOSFET
Download	SDG5521C Download (PDF)

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

DFN2*3

Overview

SDG5521C Elektronische Bauelemente N-Ch: 5A, 20V, RDS(ON) 58 mΩ P-Ch: -4.

Key Features

Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2.
3 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E.

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