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SMG2361P Datasheet P-channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: SMG2361P Elektronische Bauelemente -3.4A , -60V , RDS(ON) 210 mΩ P-Channel Enhancement MOSFET RoHS pliant Product A suffix of “-C” specifies halogen &.

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

A L 3 SC-59 3 Top View C B 1 2 2

Key Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. 1 K E D F G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 J REF. A B C D E F REF. G H J K L.

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SMG2361P Distributor