Datasheet4U Logo Datasheet4U.com

SMG2361P - P-Channel MOSFET

Datasheet Summary

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. 1 K E D F G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 J REF. A B C D E F REF. G H J K L.

📥 Download Datasheet

Datasheet preview – SMG2361P

Datasheet Details

Part number SMG2361P
Manufacturer SeCoS Halbleitertechnologie
File Size 444.48 KB
Description P-Channel MOSFET
Datasheet download datasheet SMG2361P Datasheet
Additional preview pages of the SMG2361P datasheet.

📁 Similar Datasheet

Other Datasheets by SeCoS Halbleitertechnologie

Full PDF Text Transcription

Click to expand full text
SMG2361P Elektronische Bauelemente -3.4A , -60V , RDS(ON) 210 mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. A L 3 SC-59 3 Top View C B 1 2 2 FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. 1 K E D F G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 J REF. A B C D E F REF.
Published: |