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SSE4N60 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: SSE4N60 Elektronische Bauelemente 4.1A, 600 V, RDS(ON) 2.5 Ω N-Channel Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen and.

General Description

The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology.

Key Features

  • Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. M F I H 2 Drain Q Q N 1 2 3 REF. A B C D E F G H Millimeter Min. Max. 10.6 1.58 1.82 1.20 1.45 14.22 16.50 3.50 4.00 2.70 3.30 1.20 1.78 0.50 1.00 REF. I J K L M N Q Millimeter Min. Max. 12.70 14.70 3.60 4.80 1.14 1.40 5.84 6.86 2.03 2.90 0.35 0.64 2.34 2.74 1 Gate 3 Source.

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