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SSG4530C Datasheet N & P-ch Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: SSG4530C Elektronische Bauelemente N-Ch: 5.3A, 30V, RDS(ON) 82 mΩ P-Ch: -5.

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

SOP-8 B L D M

Key Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology A C N J H G Millimeter Min. Max. 5.8 6.20 4.80 5.00 3.80 4.00 0° 8° 0.50 0.93 0.19 0.25 1.27 TYP. K F E REF. A B C D E F G REF. H J K L M N.

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