SSI2154 Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 800m A, 20V Dual N-Channel MOSFET Ro HS pliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SSI2154 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. SOT-563 MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage J D F G H E REF. A B C D E APPLICATION DC-DC converter circuit Load Switch Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 0.05 REF. F G H J Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0.30 DEVICE MARKING: 54 PACKAGE INFORMATION Package SOT-563 MPQ 3K Leader Size 7’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain - Source Voltage Gate - Source Voltage Continuous Drain Current Power Dissipation 1 1 Symbol VDS VGS TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C ID PD ID PD IDM RθJL TJ, TSTG Rating 10S 20 ±6 0.88 0.71 0.37 0.23 0.76 0.6 0.27 0.17 1.4 260 -55~150 0.8 0.64 0.3 0.19 0.69 0.55 0.22 0.14 Steady State Unit V V A W A W A ° C/W ° C Continuous Drain Current Power Dissipation Pulsed Drain...