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SSPS920NE - N-Channel MOSFET

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. REF. A B C D Millimeter Min. Max. 3.0 BSC. 2.8 BSC. 0.20 0.35 0.65 BSC. REF. E F G Millimeter Min. Max. 0.08 0.25 2.3 BSC 0.7 0.9.

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Datasheet Details

Part number SSPS920NE
Manufacturer SeCoS Halbleitertechnologie
File Size 487.50 KB
Description N-Channel MOSFET
Datasheet download datasheet SSPS920NE Datasheet

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Full PDF Text Transcription

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SSPS920NE Elektronische Bauelemente 7.1 A, 20 V, RDS(ON) 20 mΩ Dual-N Channel Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. DFN3*3-8PP FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. REF. A B C D Millimeter Min. Max. 3.0 BSC. 2.8 BSC. 0.20 0.35 0.65 BSC.
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