SSPS920NE Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 7.1 A, 20 V, RDS(ON) 20 mΩ Dual-N Channel Mode Power MOSFET Ro HS pliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. DFN3- 3-8PP Features Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. REF. A B C D Millimeter Min. Max. 3.0 BSC. 2.8 BSC. 0.20 0.35 0.65 BSC. REF. E F G Millimeter Min. Max. 0.08 0.25 2.3 BSC 0.7 0.9 PACKAGE INFORMATION Package DFN3- 3-8PP MPQ 3K Leader Size 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA = 25° C TA = 70° C ID IDM IS PD TJ, TSTG TA = 25° C TA = 70° C Ratings 20 ±8 7.1 5.8 40 2.1 1.5 1 -55 ~ 150 Unit V V A A A A W W ° C Continuous Source Current (Diode Conduction) Total Power Dissipation Operating Junction & Storage Temperature Range Thermal Resistance Ratings Thermal Resistance Junction-ambient (Max.) 1 t≦10 sec Steady State RθJA 83 120 ° C/W ° C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://.Se Co SGmb H./ Any changes of specification will not be informed...