SSU04N65 Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 4A , 650V , RDS(ON) 2.6Ω N-Ch Enhancement Mode Power MOSFET Ro HS pliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSU04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-263   Features - - - - -  Advanced high cell density Trench technology Super Low Gate Charge Excellent Cd V/dt effect decline 100% EAS Guaranteed Green Device Available  Drain Date Code Millimeter Min. Max. 4.00 4.85 0.68 1.00 0.00 0.30 0.36 0.53 1.50 REF 2.29 2.79 9.60 10.45 Millimeter Min. Max. 1.10 1.45 1.34 REF 8.0 9.15 2.54 REF 14.6 15.85 1.27 REF MARKING 4N65   Gate REF. A b L4 C L3 L1 E REF. c2 b2 D e L L2 PACKAGE INFORMATION Package TO-263 MPQ 0.8K Leader Size 13 inch -...