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SSU07N65SL - N-Channel MOSFET

Description

The SSU07N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .

Features

  • Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain REF. A b L4 C L3 L1 E Millimeter Min. Max. 4.00 4.85 0.51 1.00 0.00 0.30 0.30 0.74 1.50 REF 1.78 2.79 9.60 10.67 REF. c2 b2 D e L L2 Millimeter Min. Max. 1.10 1.65 1.34 REF 8.0 9.65 2.54 REF 14.6 15.88 1.27 REF 1 Gate 3 Source.

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Datasheet Details

Part number SSU07N65SL
Manufacturer SeCoS Halbleitertechnologie
File Size 568.28 KB
Description N-Channel MOSFET
Datasheet download datasheet SSU07N65SL Datasheet

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Full PDF Text Transcription

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SSU07N65SL Elektronische Bauelemente 7A , 650V , RDS(ON) 1.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSU07N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-263 FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain REF. A b L4 C L3 L1 E Millimeter Min. Max. 4.00 4.85 0.51 1.00 0.00 0.30 0.30 0.74 1.50 REF 1.78 2.79 9.60 10.67 REF. c2 b2 D e L L2 Millimeter Min. Max. 1.10 1.65 1.34 REF 8.0 9.65 2.54 REF 14.6 15.88 1.
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