SSU07N65SL Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 7A , 650V , RDS(ON) 1.4Ω N-Ch Enhancement Mode Power MOSFET Ro HS pliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSU07N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-263 Features Advanced high cell density Trench technology Super Low Gate Charge Excellent Cd V/dt effect decline 100% EAS Guaranteed Green Device Available Drain REF. A b L4 C L3 L1 E Millimeter Min. Max. 4.00 4.85 0.51 1.00 0.00 0.30 0.30 0.74 1.50 REF 1.78 2.79 9.60 10.67 REF. c2 b2 D e L L2 Millimeter Min. Max. 1.10 1.65 1.34 REF 8.0 9.65 2.54 REF 14.6 15.88 1.27 REF Gate Source...