SeCoS Halbleitertechnologie GmbH 2SC1959
NPN Plastic Encapsulated Transistor
| Part No. | 2SC1959 |
|---|---|
| Datasheet | 2SC1959 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Plastic Encapsulated Transistor |
| Buy | Stock & Price |
FEATURES
● Excellent hFE Linearity● High Transition Frequency CLASSIFICATION OF hFE Product-Rank 2SC1959-O hFE(1) Range hFE(2) 70~140 25 (Min) 2SC1959-Y 120~240 40 (Min) 2SC1959-GR 200~400 - MARKING C1959 031 Collector
● Base Emitter
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Continuous Collector Current IC Collector Power Dissipation PC Thermal Resistance from Junction to Ambient RθJA Junction and Storage Temperature TJ, TSTGELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Collector to Base Breakdown Voltage V(BR)CBO 35 - Collector to Emitter Breakdown Voltage V(BR)CEO 30 - Emitter to Base Breakdown Vol