Toshiba 2SC1959
PNP Transistor
| Part No. | 2SC1959 |
|---|---|
| Datasheet | 2SC1959 Download |
| Manufacturer |  Toshiba |
| Description | PNP Transistor |
| Buy | Stock & Price |
APPLICATIONS
Driver Stage AmplifierAPPLICATIONS
SwitchingAPPLICATIONS
2SC1959 Unit: mm● Excellent hFE linearity: hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA
● 1 watt amplifier applications.
● Complementary to 2SA562TM.
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 5 500 100 500 150 -55~150 Unit V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO IEBO VCB = 35 V, IE = 0 VEB = 5 V, IC = 0 hFE (1) VCE = 1 V, IC = 100 mA (Note) hFE (2) VCE = 6 V, IC = 400 mA (Note) VCE (sat) VBE fT Cob IC = 100 mA, IB = 10 mA VCE = 1 V, IC = 100 mA VCE = 6 V, IC...
