High Current Low VCE(sat) - VCE(sat)İ 250mV at IC = 200mA/IB=10mA A
SOT-523 Dim A B C D
S
2 3 Top View 1
Min 1.50 0.78 0.80 0.28 0.90 0.00 0.10 0.35 0.49 1.50
Max 1.70 0.82 0.82 0.32 1.10 0.10 0.20 0.41 0.51 1.70.
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2SC5585
Elektronische Bauelemente
RoHS Compliant Product
NPN Silicon General Purpose Transistor
FEATURES
High Current Low VCE(sat) - VCE(sat)İ 250mV at IC = 200mA/IB=10mA A
SOT-523 Dim A B C D
S
2 3 Top View 1
Min 1.50 0.78 0.80 0.28 0.90 0.00 0.10 0.35 0.49 1.50
Max 1.70 0.82 0.82 0.32 1.10 0.10 0.20 0.41 0.51 1.70
MARKING CODE
BX
L B
G H
D
3. Collector 2. Base
J K
C J K
G
L S
1. Emitter
H
All Dimension in mm
Maximum Ratings (Ta=25 o C unless otherwise specified)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (continuous) Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Value 15 12 6 0.5 0.
2SC5585 Datasheet
