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2SC5585F - NPN Transistor

Key Features

  • SOT-523 Dim A B C D S 2 3 Top View 1 Min 1.50 0.78 0.80 0.28 0.90 0.00 0.10 0.35 0.49 1.50 Max 1.70 0.82 0.82 0.32 1.10 0.10 0.20 0.41 0.51 1.70.

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2SC5585F Elektronische Bauelemente RoHS Compliant Product www.datasheet4u.com High Current Low VCE(sat) - VCE(sat)İ 250mV at IC = 200mA/IB=10mA A NPN Silicon General Purpose Transistor FEATURES SOT-523 Dim A B C D S 2 3 Top View 1 Min 1.50 0.78 0.80 0.28 0.90 0.00 0.10 0.35 0.49 1.50 Max 1.70 0.82 0.82 0.32 1.10 0.10 0.20 0.41 0.51 1.70 MARKING CODE BX L B G H J K L S D 3. Collector 2. Base G C J K 1. Emitter H All Dimension in mm Maximum Ratings (Ta=25 o C unless otherwise specified) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (continuous) Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Value 15 12 6 0.5 0.