SeCoS Halbleitertechnologie GmbH 2SD1664
NPN Silicon General Purpose Transistor
| Part No. | 2SD1664 |
|---|---|
| Datasheet | 2SD1664 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Silicon General Purpose Transistor |
| Buy | Stock & Price |
FEATURES
SOT-89 E1 b1 1 L Power dissipation PCM : 0.5 W (Tamb= 25 C) Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 40 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O 2 3 o e e1 b C 1.BASE 2.COLLECTOR 3.EMITTER Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.900 0.900 Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 3.100 1.100 0.114 0.035 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 0.060TYP 0.122 0.043 Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167ELECTRICAL CHARACTERISTICS
( Tamb=25OC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE (sat) Test Conditions Ic= 50Aˈ IE=0 Ic= 1mA...
