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2SD1664 - NPN Silicon General Purpose Transistor

Key Features

  • SOT-89 E1 b1 1 L Power dissipation PCM : 0.5 W (Tamb= 25 C) Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 40 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O 2 3 o e e1 b C 1.BASE 2.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD1664 Elektronische Bauelemente R o H S C o m p lia n t P ro d u c t D D1 A NPN Silicon General Purpose Transistor Features SOT-89 E1 b1 1 L Power dissipation PCM : 0.5 W (Tamb= 25 C) Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 40 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O 2 3 o e e1 b C 1.BASE 2.COLLECTOR 3.EMITTER Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.900 0.900 Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 3.100 1.100 0.114 0.035 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 0.060TYP 0.122 0.043 Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.