Datasheet Summary
Elektronische Bauelemente
R o H S C o m p lia n t P ro d u c t
D D1 A
NPN Silicon General Purpose Transistor
Features
SOT-89
E1 b1
Power dissipation PCM : 0.5 W (Tamb= 25 C) Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 40 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C
2 3 o e e1 b C
1.BASE 2.COLLECTOR 3.EMITTER
Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.900 0.900 Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 3.100 1.100 0.114 0.035 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 0.060TYP 0.122 0.043 Dimensions In Inches Max 0.063 0.020...
