SeCoS Halbleitertechnologie GmbH 2SD2136
NPN Transistor
| Part No. | 2SD2136 |
|---|---|
| Datasheet | 2SD2136 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
Low frequency power amplifier Low Collector-Emitter Saturation Voltage VCE(sat) High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. TO-126 1Emitter 2Collector 3Base CLASSIFICATION OF hFE (1) Product-Rank 2SD2136-P Range 40~90 2SD2136-Q 70~150 2SD2136-R 120~250 Collector 2 3 Base 1 Emitter A E F N L M K B H J C D G REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction, Storage Temperature VCBO VCEO VEBO IC PC RθJA TJ, TSTG 60 60 6 3 1.25 100 150, -55~150 Unit V V V A W °C / W °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Symbol Min.