WEJ 2SD2136
NPN Transistor
| Part No. | 2SD2136 |
|---|---|
| Datasheet | 2SD2136 Download |
| Manufacturer |  WEJ |
| Description | NPN Transistor |
| Buy | Stock & Price |
RoHS 2SD2136 2SD2136 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 1.25 W (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 3A OV(BR)CBO: 60 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ TO-126 1. EMITTER 2. COLLECTOR 3. BASE 123 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain ECollector-emitter saturation voltage LBase-emitter voltage ETransition frequency J Turn-on time Switch Time Storage time WE Fall time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT ton tstg tf Test conditions Ic=1mA, IE=0 Ic=30mA, IB=0 IE=1mA, IC=0 VCB=60V, IE=0 VEB=6V, IC=0 VCE=4V, IC=1A VCE=4V, IC=3A IC=3A, IB=375mA VCE=4V, IC=3A VCE=5V, IC=0.1A, f=200MHz IC=1A, IB1=0.1A, IB2=-0.1A MIN TYP MAX UNIT 60 V 60 V 6V 200 µA 1 mA 40 250 10 1.2 V 1.8 V 30 MHz 0.5 µs 2.5 µs 0.4 µs CLASSIFICATION OF hFE(1) Rank PQR Range 40-90 70-150 120-250 WEJ ELECTRONIC CO.