SeCoS Halbleitertechnologie GmbH 2SD2142
NPN Transistor
FEATURES
z Darlington connection for a high hFE z High input impedance MARKING:R1M Dim A B C D G H J K L S V Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 1.BASE 2.EMITTER A L 3 1 Top View 2 B S V G C D H K J All Dimension in mmMAXIMUM RATINGS
* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 40 32 12 300 o Units V V V mA mW o 200 -55~150 CELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO...