Power dissipation PCM : 1mW Tamb=25
Collector current ICM : 1.5 A
Collector-base voltage V(BR)CBO : 180 V
Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V
Operating and storage junction temperature range TJ Tstg: -55 to +150
7.6±0.2
2.7±0.2 1.3±0.2
4.0±0.1
10.8±0.2
O3.1± 0.1 12 3
2.2±0.1
15.5±0.2
1.27±0.1 0.76±0.1
4.58±0.1
2.29 Typ. 0.5± 0.1
1: Emitter 2: Collector 3: Base
Dimens ions in Millimeters.
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2SD669/2SD669A
Elektronische Bauelemente
NPN Type
Plastic Encapsulate Transistors
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
TO-126C
FEATURES
Power dissipation PCM : 1mW Tamb=25
Collector current ICM : 1.5 A
Collector-base voltage V(BR)CBO : 180 V
Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V
Operating and storage junction temperature range TJ Tstg: -55 to +150
7.6±0.2
2.7±0.2 1.3±0.2
4.0±0.1
10.8±0.2
O3.1± 0.1 12 3
2.2±0.1
15.5±0.2
1.27±0.1 0.76±0.1
4.58±0.1
2.29 Typ. 0.5± 0.
2SD669 Datasheet
