2SD669 Datasheet PDF

FEATURES

Power dissipation PCM : 1mW Tamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ Tstg: -55 to +150 7.6±0.2 2.7±0.2 1.3±0.2 4.0±0.1 10.8±0.2 O3.1± 0.1 12 3 2.2±0.1 15.5±0.2 1.27±0.1 0.76±0.1 4.58±0.1 2.29 Typ. 0.5± 0.1 1: Emitter 2: Collector 3: Base Dimens ions in Millimeters CHARACTERISTICS Tamb=25 Parameter Symbol unless otherwise specified Test conditions MIN Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain V(BR)CBO Ic= 1mA IE=0 V(BR)CEO Ic= 10mA IB=0 V(BR)EBO ICBO IEBO IE= 1mA Ic=0 VCB=160 V , IE=0 VEB= 4V , IC =0 hFE(1) * VCE=5V, IC= 150 mA hFE(2) * VCE=5V, IC= 500mA 2SD669 2SD669A 180 120 160 5 2SD669 2SD669A 60 60 30 Collector-emitter saturation voltage VCE (sat) * IC=500 mA, IB=50mA Base-emitter voltage Transitio...