SeCoS Halbleitertechnologie GmbH BAS16S
Surface Mount Switching Diode
FEATURES
z High-Speed SwitchingAPPLICATIONS
z Lead Finish: 100% Matte Sn ( Tin ) z Qualified Reflow Temperature: 260 ℃ z Extremely Small SOD-523 Package MARKING: A6 1.6±0.1 1.2±0.05 0 . 3 ±0 . 0 5 0 . 1 2 ±0 . 0 5 0.8±0.05 0.6±0.1 Dimensions in millimetersMAXIMUM RATINGS
andELECTRICAL CHARACTERISTICS
, Single Diode @TA=25℃ Parameter DC reverse voltage Forward current Pak forward surge current Total Device Dissipation Thermal Resistance Junction to Ambient Junction and storage temperature Symbol VR IF IFM(surge) PD RθJA Tj ,Tstg Limits 75 200 500 150 635 150 Unit V mA mA mW ℃/W ℃ Electrical Ratings @TA=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse recovery Time Reverse current Forward recovery voltage Diode Capacitance Stored charge Symbol Min. V(BR)R 75 VF1 VF2 VF3 VF4 trr IR VFR CD QS Typ. Max. 715 855 1000 1250 6.0 1.0 1.75 2.0 45 Unit mV ns μA V pF pC Conditions IR=100uA IF=1mA IF=10mA IF=50mA IF=150mA IF=IR=10mAdc,RL=50Ω VR=75V IF=10mA, tr= 20ns VR=0V,f=1MHZ IF=10mA, VR=5.0V ,RL=500Ω 01-Jun-2007 Rev.