Siemens BAS16S
Silicon Switching Diode Array
| Part No. | BAS16S |
|---|---|
| Datasheet | BAS16S Download |
| Manufacturer |  Siemens |
| Description | Silicon Switching Diode Array |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, T S = 85 °C Junction temperature Storage temperature Symbol Value 75 85 200 4.5 250 150 65 ...+150 mA A mW °C Unit V VR VRM IF I FS Ptot Tj T stg Thermal Resistance Junction - ambient 1) RthJA RthJS ≤ 530 ≤ 260 K/W K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Semiconductor Group 11 Apr-24-1998 1998-11-01 BAS 16SELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) VF 75 V mV I (BR) = 100 µA Forward voltage I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA Reverse current - - 715 855 1000 1250 2.5 µA nA IR IR - VR = 70 V Reverse current VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C AC characteristics Diode capacitance - - 30 50 CD t rr - - 2 6 pF ns VR = 0 V, f = 1 MHz Reverse...
