SeCoS Halbleitertechnologie GmbH BC817W
The BC817W is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.| Part No. | BC817W |
|---|---|
| Datasheet | BC817W Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
* For General AF Appliacations * High Collector Current * High Current Gain * Low Collector-Emitter Saturation VoltageABSOLUTE MAXIMUM RATINGS
Ta=25oC Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current PD Total Power Dissipation TJ,Tstg Junction and Storage Temperature REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Value 50 45 5 800 225 -55~+150 Units V V V mA mW COELECTRICAL CHARACTERISTICS
Tamb=25oC unless otherwise specifie Parameter Symbol Min Typ. Max Unit Test Conditions Collector-Base Breakdown Voltage BVCBO 50 - - V IC= 100 µA Collector-Emitter Breakdown Voltage BVCEO 45 - - V IC= 10mA Collector-Emitter Breakdown Voltage BVCEO 50 - - V IC= 100 µA Emitter-Base Breakdown Voltage BVEBO 5 - - V IE= 100 µA Collector-Base Cutoff Current ICES...