Datasheet Summary
Elektronische Bauelemente
RoHS pliant Product
NPN Silicon Multi-Chip Transistor
SOT-363
- Features
Power dissipation PCM : 0.3 W (Tamp.= 25OC)
Collector current ICM : 0.2 A
Collector-base voltage V(BR)CBO : 50 V
Operating & Storage junction Temperature
Tj, Tstg : -55 C~ +150 C
C 1 B2 E2
.055(1.40) .047(1.20)
.026TYP (0.65TYP)
.021REF (0.525)REF
8o 0o
.096(2.45) .085(2.15)
.053(1.35) .045(1.15)
.014(0.35) .006(0.15) .087(2.20) .079(2.00)
.043(1.10) .035(0.90)
.018(0.46) .010(0.26)
.006(0.15) .003(0.08)
.004(0.10) .000(0.00)
.039(1.00) .035(0.90)
E 1 B1
C2
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25OC unless otherwise...
