Datasheet4U Logo Datasheet4U.com

BC847S - NPN Silicon Multi-Chip Transistor

Key Features

  • s Power dissipation PCM : 0.3 W (Tamp. = 25OC) Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 50 V Operating & Storage junction Temperature OO Tj, Tstg : -55 C~ +150 C C 1 B2 E2 .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) .045(1.15) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .043(1.10) .035(0.90) .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) E 1 B1 C2 Dimensions in inches.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BC847S Dual NPN Small Signal Surface Mount Transistor GME
BC847S SMD General Purpose NPN Transistors Diotec
BC847S NPN Silicon AF Transistor Infineon Technologies AG
BC847S NPN Multi-Chip General Purpose Amplifier Fairchild Semiconductor
BC847S DUAL TRANSISTOR JCET

Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
BC847 General Purpose Transistor
BC847A General Purpose Transistor
BC847AS NPN Plastic Encapsulate Transistor
BC847AT NPN Plastic Encapsulate Transistor
BC847AW NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente RoHS Compliant Product BC847S NPN Silicon Multi-Chip Transistor SOT-363 * Features Power dissipation PCM : 0.3 W (Tamp.= 25OC) Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 50 V Operating & Storage junction Temperature OO Tj, Tstg : -55 C~ +150 C C 1 B2 E2 .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) .045(1.15) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .043(1.10) .035(0.90) .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.