JCET BC847S
DUAL TRANSISTOR
MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous PD Power Dissipation 00 200 RθJA Thermal Resistance. Junction to Ambient 625 Tj Junction Temperature 150 Tstg Storage Temperature Range -55~+150 Unit V mA mW ℃/W ℃ SOT-363ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 Collector cut-off current ICBO VCB=30V,IE=0 Emitter cut-off current IEBO VEB =4V, IC=0 DC current