Datasheet Summary
JC(T
JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC847S DUAL TRANSISTOR (NPN+NPN)
APPLICATION This device is designed for general purpose amplifier applications
Marking :1C
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous PD Power Dissipation
00 200
RθJA Thermal Resistance. Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature Range
-55~+150
Unit
V mA mW ℃/W ℃
SOT-363
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol...
