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Dual General Purpose Transistor NPN Silicon
P b Lead(Pb)-Free
Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation TA=25 C Junction Temperature
Storage Temperature
Device Marking
BC847S=1C
Symbol VCEO VCBO VEBO
IC
Symbol PD TJ Tstg
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage (IC=10mA ,I B=0) Collector-Base Breakdown Voltage (IC=10 µA ,IE=0) Emitter-Base Breakdown Voltage (IE=10 µA , IC=0)
BC847S
3 21
45
6
NPN+NPN
6 54
123
SOT -363(SC-88)
Value
45 50 6
200
Unit V V V mA
Max 200 +150 -55 to +150
Unit mW °C °C
Symbol
Min Max Unit
V(BR)CEO V(BR)CBO V(BR)EBO
BC847S Datasheet
