Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-563 Plastic-Encapsulate Transistors
BC847BV DUAL TRANSISTOR(NPN+NPN)
SOT-563
Features z Epitaxial Die Construction z plementary PNP Type Available (BC857BV) z Ultra-Small Surface Mount Package
Marking: K4V
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO IC
Emitter-Base Voltage Collector Current -Continuous
6 0.1
PC RθJA TJ Tstg
Collector Power Dissipation Thermal Resistance. Junction to Ambient Air Junction Temperature Storage Temperature
0.15 833 150 -55 to +150
Units V V V A W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS...
