Datasheet Summary
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC847PN DUAL TRANSISTOR (NPN+PNP)
SOT-363
Features z Epitaxial Die Construction z Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package
MAKING: 7P
MAXIMUM RATINGS TR1 (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
50 V
VCEO
Collector-Emitter Voltage
45 V
VEBO
Emitter-Base Voltage
6V
Collector Current
- Continuous
PC Collector Power Dissipation
200 mW
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃...
