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BC847PN Datasheet PDF

JCET BC847PN

DUAL TRANSISTOR

Part No. BC847PN
Datasheet BC847PN Download
Manufacturer
JCET
Description DUAL TRANSISTOR
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BC847PN datasheet page 1 preview

FEATURES

z Epitaxial Die Construction z Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package MAKING: 7P

MAXIMUM RATINGS

TR1 (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 6V IC Collector Current –Continuous 0.1 A PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ CHARACTERISTICS of TR1 (NPN Transistor) (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition fre
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