JCET BC847PN
DUAL TRANSISTOR
FEATURES
z Epitaxial Die Construction z Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package MAKING: 7PMAXIMUM RATINGS
TR1 (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 6V IC Collector Current –Continuous 0.1 A PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ CHARACTERISTICS of TR1 (NPN Transistor) (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition fre