SeCoS Halbleitertechnologie GmbH C1815
NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation VCBO VCEO VEBO IC Pc 60 50 5 150 200 Junction, Storage Temperature TJ, TSTG 150, -55 ~ 150 SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. - 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 UNIT V V V mA mW °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency V(BR)CBO 60 - - V IC=100µA, IE = 0A V(BR)CEO 50 - - V IC=0.