C1815
C1815 is NPN Transistor manufactured by Jiangsu Changjiang Electronics Technology.
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
Features
Power dissipation MAXIMUM RATINGS- TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature Value -60 -50 -5 150 200 -55-150 Units V V V m A m W ℃
TRANSISTOR (NPN) TO- 92
1.EMITTER
2.COLLECTOR
3.BASE
1 2 3
- These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector Output Capacitance Noise Figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO h FE(1) VCE(sat) VBE(sat) f T Cob NF unless
Test otherwise
MIN 60 50 5 IE=0 IB=0 IC=0 IC= 2m A 70 specified）
TYP MAX UNIT V V V 0.1 0.1 0.1 700 0.25 1 V V MHz 3.5 10 p F d B u A u A u A conditions
Ic= 100 u A, IE=0 Ic= 0. 1 m A, IB=0 IE= 100 u A, IC=0 VCB= 60 VCE= 50 VEB= VCE= 5 V, V, V,
6 V,
IC= 100m A, IB= 10 m A IC= 100 m A, IB= 10m A VCE= 10 V, IC= 1m A f=30MHz VCB=10V,IE=0 f=1MHZ VCE= 6 V, IC=0.1 m A f =1KHz,RG=10K 80
CLASSIFICATION OF
Rank h FE(1)
O Y 120-240 GR 200-400 BL 350-700
.. Range 70-140
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Typical Characteristics
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