-Power dissipation P CM =0.2W
0.056(1.40) 0.047(1.20)
SOT-23
0.119(3.00) 0.110(2.80)
3
Marking: HF
Collector 3
0.044(1.10) 0.035(0.90)
1
0.083(2.10) 0.066(1.70)
2
0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20)
1 Base
0.020(0.50) 0.013(0.35)
0.006(0.15) max 0.007(0.20) min
2 Emitter
O
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25 C unless otherwise noted)
Parameter
Collector-Base voltage
www. DataSheet4U. com
Symbol
V CBO V CEO V EBO IC PD T J ,T STG
O
Value
-60 -50 -.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
General Purpose Transistors
COMCHIP
SMD Diodes Specialist
C1815-G (NPN)
RoHS Device
Features
-Power dissipation P CM =0.2W
0.056(1.40) 0.047(1.20)
SOT-23
0.119(3.00) 0.110(2.80)
3
Marking: HF
Collector 3
0.044(1.10) 0.035(0.90)
1
0.083(2.10) 0.066(1.70)
2
0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20)
1 Base
0.020(0.50) 0.013(0.35)
0.006(0.15) max 0.007(0.20) min
2 Emitter
O
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25 C unless otherwise noted)
Parameter
Collector-Base voltage
www.DataSheet4U.
C1815-G Datasheet
