SeCoS Halbleitertechnologie GmbH C1815T
NPN Transistor
| Part No. | C1815T |
|---|---|
| Datasheet | C1815T Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 60 50 5 150 400 125, -55 ~ 125 Unit V V V mA mW °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob NF 60 50 5 70 80 - - - - V IC=100μA, IE=0 - - V IC=0.1mA, IB=0 - - V IE=100μA, IC=0 - 0.1 μA VCB=60V, IE=0 0.1 μA VCE=50V, IB=0 - 0.1...