SeCoS Halbleitertechnologie GmbH KTC3265
NPN Plastic Encapsulated Transistor
| Part No. | KTC3265 |
|---|---|
| Datasheet | KTC3265 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Plastic Encapsulated Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 35 30 5 800 200 150, -55~150 Unit V V V mA mW °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 35 - - V IC=100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=100µA, IC=0 Collector Cut-Off Current ICBO - - 0.1 µA VCB=30V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 µA VEB=5V, IC=0 DC Current Gain hFE 100 - 320 VCE=1V, IC=100mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.5 V IC=500mA, IB=20mA Base to Emitter Saturation Voltage VBE 0.5 - 0.8 V IC=10mA, VCE=1V Transition Frequency fT - 120 - MHz VCE=5V, IC=10mA, f=100MHz Collector output capacitance Cob - 13 - pF VCB=10V, IE=0, f=1MHZ 15-Jul-2011 Rev.