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KTD1304 - NPN Plastic Encapsulated Transistor

Key Features

  • z High emitter-base voltage: VEBO=12V(Min) z low on resistance: Ron=0.6Ω(max)(IB=1mA).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente KTD1304 0.3 A, 25 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z High emitter-base voltage: VEBO=12V(Min) z low on resistance: Ron=0.6Ω(max)(IB=1mA) PACKAGE DIMENSIONS 1 Base 3 Collector 2 Emitter A L 3 Top View 12 VG BS D K J C H SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.