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NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
KTD1304
1 2
3
SOT-23
ABSOLUTE MAXIMUM RATINGS(Ta Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Disspation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Value 25 20 12 0.3 0.2 150
-55 - 150
Unit V V V
A W ˚C ˚C
WEITRON
http://www.weitron.com.tw
1/4
05-Feb-09
KTD1304
ELECTRICAL CHARACTERISTICS Characteristics
Collector-Base Breakdown Voltage IC=0.1mA,I E =0 Collector-Emitter Breakdown Voltage IC=1mA,I B=0 Emitter-Base Breakdown Voltage IC=0,IE=0.1mA
IE=0,VCB=25V
IC=0,VEB=12V
ON CHARACTERISTICS DC Current Gain IC=4mA,VCE=2V IC=4mA,VCE=2V Collector-Emitter Saturation Voltage IC=0.