KEC KTD1304
EPITAXIAL PLANAR NPN TRANSISTOR
| Part No. | KTD1304 |
|---|---|
| Datasheet | KTD1304 Download |
| Manufacturer |  KEC |
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Buy | Stock & Price |
FEATURES
High Emitter-Base Voltage : VEBO=12V(Min.). High Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). Low on Resistance : RON=0.6 (Max.) (IB=1mA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING 25 20 12 300 30 200 150 -55 150 UNIT V V V mA mA mW KTD1304 EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking MAXType Name Lot No.ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current IEBO DC Current Gain hFE1 (FOR) hFE2 (REV) Collector-Emitter Saturation Voltage VCE(s...