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KTD1304 - EPITAXIAL PLANAR NPN TRANSISTOR

Key Features

  • High Emitter-Base Voltage : VEBO=12V(Min. ). High Reverse hFE : Reverse hFE=20(Min. ) (VCE=2V, IC=4mA). Low on Resistance : RON=0.6 (Max. ) (IB=1mA).

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Datasheet Details

Part number KTD1304
Manufacturer KEC
File Size 352.03 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTD1304 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA AUDIO MUTING APPLICATION. FEATURES High Emitter-Base Voltage : VEBO=12V(Min.). High Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). Low on Resistance : RON=0.6 (Max.) (IB=1mA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING 25 20 12 300 30 200 150 -55 150 UNIT V V V mA mA mW KTD1304 EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.