KEC KTD1302
EPITAXIAL PLANAR NPN TRANSISTOR
| Part No. | KTD1302 |
|---|---|
| Datasheet | KTD1302 Download |
| Manufacturer |  KEC |
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Buy | Stock & Price |
FEATURES
ᴌHigh Emitter-Base Voltage : VEBO=12V(Min.). ᴌHigh Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). ᴌLow on Resistance :RON=0.6ή(Typ.) (IB=1mA). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING 25 20 12 300 30 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ L M C KTD1302 EPITAXIAL PLANAR NPN TRANSISTOR BC JA K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92ELECTRICAL CHARACTERISTICS
(Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO hFE(1) (FOR) hFE(2) (REV) V...