• Part: KTD1302
  • Description: EPITAXIAL PLANAR NPN TRANSISTOR
  • Manufacturer: KEC
  • Size: 69.04 KB
Download KTD1302 Datasheet PDF
KTD1302 page 2
Page 2

Datasheet Summary

SEMICONDUCTOR TECHNICAL DATA AUDIO MUTING APPLICATION. Features ᴌHigh Emitter-Base Voltage : VEBO=12V(Min.). ᴌHigh Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). ᴌLow on Resistance :RON=0.6ή(Typ.) (IB=1mA). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING 25 20 12 300 30 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ EPITAXIAL PLANAR NPN TRANSISTOR 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H...