KEC KTD1303
EPITAXIAL PLANAR NPN TRANSISTOR
| Part No. | KTD1303 |
|---|---|
| Datasheet | KTD1303 Download |
| Manufacturer |  KEC |
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Buy | Stock & Price |
FEATURES
ᴌHigh Emitter-Base Voltage : VEBO=12V(Min.). ᴌHigh Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). ᴌLow on Resistance :RON=0.6ή(Typ.) (IB=1mA). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING 25 20 12 300 30 400 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ J K D KTD1303 EPITAXIAL PLANAR NPN TRANSISTOR B F A HM C EE 1 2 3N L 1. EMITTER 2. COLLECTOR 3. BASE G O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27 F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.45 L 25 M 0.80 N 0.55 MAX O 0.75 TO-92MELECTRICAL CHARACTERISTICS
(Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitte