M8550T
M8550T is PNP Transistor manufactured by SeCoS Halbleitertechnologie GmbH.
FEATURE
Power Dissipation
TO-92
AD B
E CF
1Emitter 2Base 3Collector
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current
- Continuous Collector Power Dissipation Junction, Storage Temperature
VCBO VCEO VEBO
IC PC TJ, TSTG
-40 -25 -6 -800 625 125, -55~125
Unit
V V V m A m W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
-40
- -
V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
-25
- -
V IC=0.1m A, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO...
