SeCoS Halbleitertechnologie GmbH MJE172
PNP Transistor
| Part No. | MJE172 |
|---|---|
| Datasheet | MJE172 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
● Low frequency amplifier● Low current
● High speed switching applications
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C unless otherwise specified) Parameter Symbol Ratings MJE170 -60 Collector - Base Voltage MJE171 MJE172 VCBO -80 -100 MJE170 -40 Collector - Emitter Voltage MJE171 MJE172 VCEO -60 -80 Emitter - Base Voltage Collector Current -Continuous Cpllector Power Dissipation Junction, Storage Temperature VEBO IC PC TJ, TSTG -7 -3 1.5 +150, -65 ~ +150 A E F N L M K B H J C D Emitter Collector●Base G REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20 Unit V V V A W °C
ELECTRICAL CHARACTERISTICS
(Ta = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. MJE170 Collector - Base Breakdown MJE171 Voltage MJE172 V(BR)CBO -60 -80 -100 - - MJE170 Collector - Emitter Breakdown MJE171 Voltage MJE172 V(BR)CEO -40 -60...
