SeCoS Halbleitertechnologie GmbH MMBT4403
PNP Silicon Switching Transistor
MAXIMUM RATINGS
* TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Dissipation TJ, Tstg Junction and Storage Temperature Value -40 -40 -5 -0.6 0.3 -55-150 Units V V V A W ℃ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO Ic=-100μA , IE=0 -40 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 Emitter-base breakdown v