SeCoS Halbleitertechnologie GmbH MMBT5401
PNP Silicon General PurposeTransistor
| Part No. | MMBT5401 |
|---|---|
| Datasheet | MMBT5401 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Silicon General PurposeTransistor |
| Buy | Stock & Price |
FEATURES
Ideal for medium power amplification and switching MARKING 2LABSOLUTE MAXIMUM RATINGS
Parameter Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage Collector Current - Continuous Symbol Ratings VCEO VCBO VEBO IC -150 -160 -5.0 -500 Unit V V V mA SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.80 2.25 1.20 3.00 2.55 1.40 0.90 1.15 1.80 2.00 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. THERMAL CHARACTERISTICS Parameter Symbol Total Power Dissipation Thermal Resistance, Junction to Ambient Total Power Dissipation Thermal Resistance, Junction to Ambient Junction, Storage Temperature TA = 25°C Derate above 25°C Alumina Substrate,(2) TA = 25°C Derate above 25°C PD RθJA PD RθJA TJ, TSTG
