Power dissipation & Collector current
Pcm: 0.2W Icm: 0.3A.
High voltage V(BR): 300V
2. Base
3. Collector 1.Emitter
RoHS Compliant Product
A L
Top View
BS
VG
C D HK
SOT-323 Dim Min Max
A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 J L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm
č.
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Elektronische Bauelemente
MMBTA42W
NPN Silicon
General Purpose Transistor
FEATURES
· Plastic-Encapsulate Transistors · Power dissipation & Collector current
Pcm: 0.2W Icm: 0.3A
· High voltage V(BR): 300V
2. Base
3. Collector 1.Emitter
RoHS Compliant Product
A L
Top View
BS
VG
C D HK
SOT-323 Dim Min Max
A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 J L 0.590 0.720 S 2.000 2.400 V 0.280 0.